Everything about Tunnel Diode totally explained
A
tunnel diode or
Esaki diode is a type of
semiconductor diode which is capable of very fast operation, well into the
microwave frequency region, by using
quantum mechanical effects.
It was invented in 1958 by
Leo Esaki, who in 1973 received the Nobel Prize in Physics for discovering the
electron tunneling effect used in these diodes.
These diodes have a heavily doped
p-n junction only some 10 nm (100
Å) wide. The heavy doping results in a broken
bandgap, where
conduction band electron states on the n-side are more or less aligned with
valence band hole states on the p-side.
Tunnel diodes were manufactured by
General Electric and other companies from about 1960, and are still made in low volume today.
Forward bias operation
Under normal
forward bias operation, as voltage begins to increase,
electrons at first tunnel through the very narrow
p-n junction barrier because filled electron states in the conduction band on the n-side become aligned with empty valence band hole states on the p-side of the pn junction. As voltage increases further these states become more misaligned and the current drops — this is called
negative resistance, because current decreases with increasing voltage. As voltage increases yet further, the diode begins to operate as a normal diode, where electrons travel by conduction across the pn junction, and no longer by tunneling through the pn junction barrier. Thus the most important operating region for a tunnel diode is the negative resistance region.
Reverse bias operation
When used in the reverse direction they're called
back diodes and can act as fast
rectifiers with zero offset voltage and extreme linearity for power signals. (That is, they've an accurate
square law characteristic in the reverse direction.)
Under
reverse bias filled states on the p-side become increasingly aligned with empty states on the n-side and electrons now tunnel through the pn junction barrier in reverse direction — this is the
Zener effect that also occurs in
zener diodes.
Technical comparisons
In a conventional semiconductor diode, conduction takes place while the PN junction is forward biased and blocks current flow when the junction is reverse biased. This occurs up to a point known as the 'reverse breakdown voltage' when conduction begins (often accompanied by destruction of the device). In the tunnel diode, the dopant concentration in the P and N layers are increased to the point where the
reverse breakdown voltage becomes
zero and the diode conducts in the reverse direction. However, when forward-biased, an odd effect occurs called '
quantum mechanical tunnelling' which gives rise to a region where an increase in forward voltage is accompanied by a
decrease in forward current. This
negative resistance region can be exploited in a solid state version of the
dynatron oscillator which normally uses a
tetrode thermionic valve (or tube).
The tunnel diode showed great promise as an oscillator and high-frequency threshold (trigger) device since it would operate at frequencies far greater than the tetrode would, well into the microwave bands. Applications for tunnel diodes included local oscillators for
UHF television tuners, trigger circuits in
oscilloscopes, high speed counter circuits, and very fast rise time pulse generator circuits. However, since its discovery, more conventional semiconductor devices have surpassed its performance using conventional oscillator techniques. For many purposes a three-terminal device, such as a field-effect transistor, is more flexible than a device with only two terminals. Practical tunnel diodes operate at a few millamperes and a few tenths of a volt, making them low-power devices.
Tunnel diodes are also relatively
resistant to
nuclear radiation, as compared to other diodes. This makes them well suited to higher radiation environments, such as those found in space applications.
Further Information
Get more info on 'Tunnel Diode'.
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